Figure 4
From: Deep-submicron Graphene Field-Effect Transistors with State-of-Art fmax
RF performance of the de-embeded 300- and 200-nm-gate-length GFETs.
h21 and MUG of a 300-nm-gate-length GFET (a) and a 200-nm-gate-length GFET (b).
Figure 4 | Scientific Reports
