Figure 3
From: High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography
Cross-sectional bright-field STEM images under two-beam conditions for AlN grown on NPSS with (a) g = [0002], and (b) g = [11
0], (c–e) are the magnified STEM images of three selected typical zones in (b).
