Figure 4
From: Energy-filtered Electron Transport Structures for Low-power Low-noise 2-D Electronics
The position-dependent LDOS as a function of bias voltage in the GQD side-gate device.
(a–d) are position-dependent LDOS plots under −0.7 V, 0.6 V, 0.7 V and 0.8 V bias voltages at −0.2 eV, −0.25 eV, −0.15 eV, and −0.15 eV respectively. The variable z indicates position along the transport direction.
