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Figure 1

From: Resistive Switching in All-Printed, Flexible and Hybrid MoS2-PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset

Figure 1

AFM, FESEM and TEM images of as synthesized MoS2 flakes.

(a) AFM image of single exfoliated MoS2 flake illustrating its few layered nature with average thickness of 4 nm. (b) FESEM image illustrating the high densityof as synthesized MoS2 flakes. (c) A single exfoliated flake of MoS2. (d) Typical bright field TEM image of MoS2 flakes showing layer edges. (e) Phase contrast High Resolution (HR) TEM image of thin MoS2 flakes clearly displaying layer edges. Inset in (e) shows the selective area electron diffraction (SAED) pattern. (f) Energy dispersive X-ray spectroscopy (EDS) of exfoliated MoS2 flakes. Scale bar of above images have been redrawn for better visibility.

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