Table 1 Comparison of MoS2-PVA nanocomposite based memristive device with already reported memory devices based on PVA nanocomposites.

From: Resistive Switching in All-Printed, Flexible and Hybrid MoS2-PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset

Active Layer Materials

Voltage Sweep

Off/On ratio

Current Compliance

Endurance

Retention

Mechanical Robustness

Bend-ability

Ref.

MoS2-PVA

−4 to +4

1.28 × 102

60 uA

1000

105 s

1500 cycles

2 mm

 

PVA-PbS

−30 to +30

<10

30 uA

—

—

—

—

35

AgNW-PVA

−10 to +10

~10

10 mA

160

—

—

—

36

PEDOT:PSS-PVA

−2 to +2

~102

100 mA

—

36 × 104 s

—

—

37

GNF–PVA

−7 to +2

~102

1 mA

100

1 × 104 s

—

—

38

  1. It is evident from the illustrated results that MoS2 flakes play a vital role in improving the electrical properties of PVA based memory devices.
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