Figure 2
Transfer characteristics at VDS = 5.1 V for the SZTO TFT with different Si contents.
The TFT is formed on a 200-nm-thick a-SiO2/n+-Si wafer with a top-contact structure.
Figure 2 | Scientific Reports
Transfer characteristics at VDS = 5.1 V for the SZTO TFT with different Si contents.
The TFT is formed on a 200-nm-thick a-SiO2/n+-Si wafer with a top-contact structure.
