Table 1 Electrical parameters of SZTO transistors with different Si compositions.

From: Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration

Si: Zn: Sn

Vth (V)

Ion/off current ratio

μFE (cm2 V−1 S−1)

Sub-threshold swing (V/decade)

ZTO

3.5

2.5 × 108

14.99

0.59

0.3 SZTO

1.5

2.4 × 107

17.043

0.63

0.5 SZTO

6.7

9.2 × 106

7.953

0.96

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