Figure 7

SEM images showing (a) a CuInS₂ film deposited on a glass/ITO substrate and (b) a device stack consisting of a CuInS₂/CdS/ZnO trilayer structure deposited on a glass/ITO substrate. CuInS₂ and CdS layers were annealed at 300 °C, while ZnO was annealed at 120 °C.