Figure 1 | Scientific Reports

Figure 1

From: Materials characterisation by angle-resolved scanning transmission electron microscopy

Figure 1

Angular dependence of scattered intensity for GaNxAs1−x.

This simulation depicts the scattered intensity for GaAs and GaNAs at different thicknesses, normalised to the incident beam intensity I0 and the solid angle ΔΩ. The ranges of the ADF detector used for Fig. 2 are marked as A and B. Substitution of only 3% of As by N causes high static disorder which leads to a strong effect (shown red) in the angular dependence owing to Huang scattering.

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