Figure 5
From: Materials characterisation by angle-resolved scanning transmission electron microscopy
Scattered intensity in dependence of angle, specimen thickness and Ge content.
The data was calculated in the three regimes A,B,C marked in Fig. 3b, corresponding to (a) pure Si, (b) Ge content xB = 22% and (c) Ge content xC = 37%. Red/black data refer to the thick/thin specimen. Dashed lines represent (multislice) simulations. δ is the exponent for the modified Rutherford model for selected angles.
