Figure 3

Characterization of the functionalized MEMS devices by ToF-SIMS: ToF-SIMS data of (a) piranha treated and (b) 3-APTES treated SiO2 surface. The spectral data for the z-11-hexadecenal exposed SiO2-APTES surface is shown in (c). The probable mass fragmentations which result in the mass peaks of 221 and 281 are shown in (e). The 2D images for the total ion counts and the average silicon ion density is depicted in (d) for the bare SiO2, SiO2-APTES and SiO2-AP-z-11 surfaces. The 2D images for the mass values corresponding to 58 and 221 are also shown in (d).