Figure 1
From: Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices
Electrical control of transport properties.
(a) The conventional I-V curve measured by using Keithley 2400 and 2182A is marked as DC, while the I-V curves measured under different fixed AC amplitudes is marked as DC+AC x μA, where x represents the applied AC amplitude. Inset shows the schematic measurement configuration, where magnetic field is applied parallel to the current flow in the Ge substrate. (b) The AC amplitude dependence of the voltage intercept deduced from Fig. 1a. The top inset shows the real time voltage obtained by using oscilloscope when a small DC current of 1 nA was supplied by Keithley 2400, while the bottom inset shows the real time voltage obtained when a sinusoidal AC of 0.1 mA with constant DC offset of 1 μA was supplied by Keithley 6221. (c) The magnetic field dependence of the detected DC voltage measured for variable DC offset at a fixed AC = 0.1 mA. (d) The DC offset dependence of the deduced rectification MR from Fig. 1c.
