Figure 2
From: Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices
Transport measurements of devices grown on different substrates.
(a)–(c) respectively show the corresponding I-V curves in different magnetic field (a), conventional DC MR (b), and AC rectification MR (c) for the intrinsic Ge-Schottky devices and Ge substrates. In (b) and (c), the bulk properties (marked by bulk) of the intrinsic Ge substrate have been measured after changing the Schottky electrode into Ohmic contact, where linear I-V curves have been confirmed as shown in the inset of (a). In (b), the interface DC voltage is obtained by subtracting the bulk signal from the total signal. In (c), the interface DC voltage of Ge-Schottky devices is directly measured under AC current. (d)–(f) are the same measurements as (a)–(c), but for the p-type Ge-Schottky devices and Ge substrates. (g)–(i) are also the same measurements as (a)–(c), but for the n-type Ge-Schottky devices and Ge substrates.
