Figure 3
From: Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices
Anisotropic transport characterization.
(a) The room temperature I-V curves of the studied circle Al/Ge Schottky heterojunction with the top electrode to be Schottky contacts. Inset reveals the schematic device configuration. (b) The room temperature I-V curves of the intrinsic Ge substrate with Ohmic contacts. Inset shows the corresponding rectification MR measurements. (c) and (d) respectively show the conventional MR and rectification MR measurements of the circle Al/Ge Schottky devices. Here, the ⊥ (//) configuration means that the applied magnetic field is perpendicular (parallel) to the current flow.
