Figure 1
From: Broken-Symmetry Quantum Hall States in Twisted Bilayer Graphene
(a) Longitudinal resistance Rxx of D1 as a function of back-gate voltage Vg at various temperatures. The left inset is the optical image of D1 with a 10 μm scale bar. The right inset shows longitudinal resistance of D1 and D2 at 1.8 K. (b) The Hall conductivity σxy as a function of ntot at B fields from 1 T to 14 T in 1 T steps for the D1. (c) Rxx of D1 as a function of the total filling factor νtot at different B fields from 3 T to 14 T in 1 T steps. The vertical dashed lines correspond to νtot = 2·ν single = 2·(4N + 2) = 4, 12, 20, 28, 36,…, where N is the Landau index.
