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Figure 3

From: Broken-Symmetry Quantum Hall States in Twisted Bilayer Graphene

Figure 3

(a) Schematic illustration of symmetric-antisymmetric gap (ΔSAS) formation and the corresponding wave functions. AS(S) denotes the antisymmetric (symmetric) state, and U(L) denotes upper (lower) layer state. (b) Schematic drawing of the LL evolution for the broken-symmetry states with B field. The solid (dashed) line indicates the layer asymmetric (symmetric) levels. The valley (K, K’) and spin (↑, ↓) degrees of freedom are colour coded. The experimentally observed transitions are marked by circles. (c) The longitudinal resistance Rxx and (d) the Hall conductivity σxy as a function of total filling factor νtot at B fields from 4.5 T to 14 T with a step of 0.5 T for D1. The arrows indicate the Rxx dip and the corresponding Hall plateaus for the broken-symmetry QH state in zeroth and first landau levels. (e) Colour rendition of Rxx as a function of the total filling factor νtot for D1. Field-dependent Rxx (f) at νtot = −2 and 0 for D1 and (g) at νtot = 2 for D2 at 1.8 K. The Rxx dip and hump are marked by the arrows. (h) Temperature evolution of the longitudinal resistance, ΔRxx (Rxx(T) – Rxx (20 K)), from 1.8 K to 20 K as function of νtot at different magnetic fields for D2. The scale bar is 1 kΩ. The green dot lines between (g) and (h) indicate the corresponding magnetic fields from 4 T to 9 T in 1 T steps for data shown in (h).

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