Figure 1 | Scientific Reports

Figure 1

From: Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction

Figure 1

Dependence of TMR ratio on a nanoscale spacer material and thickness for double MgO based p-MTJ spin-valves ex-situ annealed at 400 °C for 30 min under perpendicular applied field of 3 Tesla.

(a) double MgO based on p-MTJ spin-valve using a nanoscale thick Ta spacer, (b) double MgO based on p-MTJ spin-valve using a nanoscale thick W spacer, and (c) TMR ratio depending on a nanoscale spacer material (Ta or W) and thickness.

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