Figure 3 | Scientific Reports

Figure 3

From: Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction

Figure 3

Dependence of the (100) b.c.c crystallinity of the capping MgO layer and the MgO tunneling barrier on a nanoscale spacer material for double MgO based p-MTJ spin-valves ex-situ annealed at 400 °C for 30 min under perpendicular applied field of 3 Tesla.

x-HR-TEM images of double MgO based p-MTJs for (a) Ta spacer of 0.4 nm and (b) W spacer of 0.4 nm.

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