Table 3 The performance characteristics of the two-layer PLED devices.
Host | Vona (V) | Lmax (cd/m2) | ηL at L = 100 cd/m2 (cd/A) | ηL at L = 1000 cd/m2 (cd/A) | Max. ηL, ηP, and EQEb (cd/A, lm/W, %) |
---|---|---|---|---|---|
Si(tOXD)(oTPA) | 4.0 | 25452 (at 15.4 V) | 58.3 (at 6.6 V) | 42.4 (at 9.0 V) | 80.1 (at 4.2 V), 62.9, 21.2% |
Si(tOXD)(tTPA) | 5.4 | 18750 (at 17.6 V) | 42.2 (at 8.4 V) | 28.6 (at 11.2 V) | 73.5 (at 5.4 V), 42.7, 19.5% |
Si(doTPA) | 3.0 | 19847 (at 13.8 V) | 65.7 (at 4.6 V) | 63.3 (at 6.4 V) | 66.5 (at 5.2 V), 60.1, 17.6% |
Si(dtOXD) | 6.0 | 4087 (at 20.0 V) | 10.1 (at 10.2 V) | 8.3 (at 14.4 V) | 10.3 (at 9.0 V), 4.4, 2.73% |