Figure 9 | Scientific Reports

Figure 9

From: Catalyst- and template-free low-temperature in situ growth of n-type CdS nanowire on p-type CdTe film and p-n heterojunction properties

Figure 9

(a) I~V characteristics under the dark environment of the CdS/CdTe heterojunction fabricated at 370 °C. The inset shows an enlarged curve in the vertical axis direction; (b) I–V characteristics under the dark environment of the CdS/CdTe heterojunction fabricated at 450 °C. The inset shows a schematic illustration of the electrical measurement system.

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