Figure 3
Conductivity behaviour of β-Bi2O3 thin films.
(a) Conductivity as a function of time of a ~45 nm thick Bi2O3 thin film on a (111)Pt/TiO2/SiO2/(100)Si substrate. Measurements were carried out on planar capacitors fabricated by the deposition on the film surface of ~200 μm diameter Au electrodes. (b) Impedance diagram measured at 380 K for a ~190 nm thick Bi2O3 thin film on a Al2O3 substrate with interdigital Au electrodes (IDE) deposited on the film surface (Figure S5). The lack of Au electrode blocking at low frequencies (inset) indicates a dominant electronic conductivity. (c) Conductivity as a function of temperature in the interval of 460–680 K of the former Bi2O3 thin film.
