Table 2 Comparison of exciton binding energies |Eb| and GW band gaps.

From: Model dielectric function for 2D semiconductors including substrate screening

 

MoS2

hBN

Si(111)

Binding energy

Present

0.44

1.90

0.20

Ab initio

0.1522, 0.434, 0.6525

1.832, 2.054, 2.120

0.2618

GW and TB gaps

Present

2.42

8.00

0.66

Ab initio

2.4833, 2.725

7.932, 7.420

0.6217, 0.6918

  1. All values are in eV. Note, only exciton binding energies are actually calculated in the present work. Appropriate TB band gaps are ensured by using TB parameters which ensure agreement between experimental and theoretical exciton features. Superscripts indicate references.
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