Figure 5: Geometrical description of the light collected by the current configuration. | Scientific Reports

Figure 5: Geometrical description of the light collected by the current configuration.

From: Combining in-situ lithography with 3D printed solid immersion lenses for single quantum dot spectroscopy

Figure 5

(a) depicts a hemispheric lens placed exactly on top of the QD and the blue lines represent the experimental NA = 0.8. The green line depicts the light beam exiting the lens orthogonally to the GaAs layer. The inset shows the emitted light that can be extracted from the semiconductor (calculations performed with h-SIL). For larger emission angles, TIR conditions are fulfilled so the light is confined into the GaAs layer. Only a fraction of this light can be collected with the present NA (blue lines). (b) QD displaced with respect to the centre of the h-SIL. For clarity a displacement value of 2.5 μm (more than 3 times larger that the maximum observed displacement) is chosen. Ray optics have been used for calculating the beam refraction at the lens interface. The green line shows the beam leaving the lens orthogonally to the GaAs surface. For sake of completeness, the maximum collected angle is also depicted (blue).

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