Figure 2: The temperature dependence of PL intensity measured under the resonant excitation (λexc = 809 nm) indicates a low thermal quenching from Er3+ ions in our GaN:Er epilayer. | Scientific Reports

Figure 2: The temperature dependence of PL intensity measured under the resonant excitation (λexc = 809 nm) indicates a low thermal quenching from Er3+ ions in our GaN:Er epilayer.

From: Photoluminescence quantum efficiency of Er optical centers in GaN epilayers

Figure 2

The plot illustrates the (I0/I − 1) vs. T−1 behavior that was used to guide the Arrhenius fitting in which I is the integrated PL intensity at the temperature of T, I0 is the integrated PL intensity at 10 K. Activation energies of 13 and 118 meV have been determined. (inset) The integrated PL intensity measurements at 1.54 μm band show a thermal quenching of 20% from 10 K to room temperature from isolated Er optical centers.

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