Figure 2

2D and 1D normalized electric field distributions for (a)–(c) HDLNRPW, and (d)–(f) traditional HPW. For both structures, the dimensions of the rectangular-shaped silicon slabs are fixed at w = h = 200 nm, while their gap sizes were both chosen as g = 5 nm. The radius of the silicon nanoridge was r = 20 nm. The electric fields were normalized with respect to the power flow in each structure. The 1D field profiles show the normalized electric fields along the center of the gap region.