Figure 1: AFM observation of tribochemical wear on silicon surfaces by SiO2 tip.
From: Effect of crystal plane orientation on tribochemical removal of monocrystalline silicon

AFM images and cross-sectional profiles of nanowear tracks on Si(100), Si(110) and Si(111) by SiO2 microsphere in ultrapure water (a) and at 50% RH (b), The applied normal load was 3 μN. Comparison of wear depths on silicon samples with different crystal planes under various normal loads in ultrapure water (c) and at 50% RH (d). (e) Effect of relative humidity on the wear depths of silicon surfaces with different crystal planes. The applied normal load was 3 μN. The values of wear depths under the same loading conditions in water were also plotted as a comparison.