Figure 3: High-resolution TEM images of the wear tracks on Si(100), Si(111) and Si(110) samples after rubbed by SiO2 tip.
From: Effect of crystal plane orientation on tribochemical removal of monocrystalline silicon

Nanowear tests were performed under the condition of Fn = 3 μN in ultrapure water. HRTEM images and representative lattice resolved images marked with a frame (white dotted line) show ~4.6 nm, 6.7 nm and 7.5 nm deep wear scars formed on Si(100) (①②), Si(111) (③④) and Si(110) (⑤⑥) surface, respectively. Inset AFM images show the corresponding three-dimensional topography of the wear scars.