Figure 5: The schematic illustration showing the atomic structure of silicon materials and nanowear test details. | Scientific Reports

Figure 5: The schematic illustration showing the atomic structure of silicon materials and nanowear test details.

From: Effect of crystal plane orientation on tribochemical removal of monocrystalline silicon

Figure 5

(a) The configuration of Si(100), Si(110) and Si(111) samples. (b) The upper AFM tips moved horizontally on the silicon samples with displacement amplitude D of 500 nm and normal loads of 0.5 ~ 3 μN. The inset SEM images show the SiO2 tip with R of 1 μm and the diamond tip with R of 0.25 μm. The relative humidity was controlled from 0% to 80%.

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