Figure 2: Simulations of THz modulated scatterers. | Scientific Reports

Figure 2: Simulations of THz modulated scatterers.

From: Modulated scattering technique in the terahertz domain enabled by current actuated vanadium dioxide switches

Figure 2

(a) Input impedance ZA for the antenna with optimized dimensions (LA = 300 μm, WA = 400 μm), simulated from 0.1 THz to 1.7 THz. (b) Reflection coefficient ΓK for ON and OFF states for all the frequency points, obtained from the simulated ZA values and the load impedance values for a VO2 switch with length L = 2 μm, width W = 4 μm and resistivities ρOFF = 4.7 · 10−1 Ω·m, ρON = 4.3 · 10−6 Ω·m, extracted from four-point probe measurements of the VO2 film used in this work. (c) Resulting modulation coefficient. (d) Input impedance ZA for the antenna with reduced dimensions (LA = 60 μm, WA = 80 μm), simulated from 0.45 THz to 0.9 THz. (e) Reflection coefficient ΓK for ON and OFF states for the smaller MS keeping the same VO2 switch (L = 2 μm, W = 4 μm, ρOFF = 4.7 · 10−1 Ω·m, ρON = 4.3 · 10−6 Ω·m). (f) Modulation coefficient for the smaller MS.

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