Figure 2: Strained bi-layer MoS2 band structure calculation.
From: Strain Gated Bilayer Molybdenum Disulfide Field Effect Transistor with Edge Contacts
(a) The continuously narrowed band gap of bilayer MoS2 as a function of increasing lattice constant, the band structure with 1%, 5% and 10% tensile strain are shown in (b,c and d). The blue and green dots in the figure represent Mo and S element occupation respectively.
