Figure 6
(a) Simulation model for a MOSFET displaying the IDS-VDS characteristics shown in Fig. 3a. A MOS structure is composed of metal, Al2O3 and undoped diamond. Source and drain metals contact with the undoped diamond at both edges with 0 eV Schottky barrier height. Negative and positive charge sheets are spaced at the Al2O3/diamond interface and at the bottom of undoped diamond, respectively. (b) Electric field distributions along the Al2O3/C-H diamond interface that were calculated using the model shown in (a), where the Al2O3 thickness is 200 nm. (c) The same electric field distributions, calculated when the Al2O3 thickness is 400 nm.
