Figure 2: Schematic diagram of the experiment and the modification of GO solid surface.
From: Graphene Oxide Demonstrates Experimental Confirmation of Abraham Pressure on Solid Surface

GO thin film was irradiated by a 532 nm laser beam through a 100X objective (NA 0.9). For low laser power the irradiated spot shows bending of the GO surface, whereas for high power laser irradiation etching of GO surface takes place. The GO thin film bends due to radiation pressure whereas the void formation takes place for high power laser irradiation.