Figure 5
From: Deliberate and Accidental Gas-Phase Alkali Doping of Chalcogenide Semiconductors: Cu(In,Ga)Se2
(a) EQE measurements of cells 1, 5 and 10 of sample Flux-NaCl showing an increasing CIGSe surface band gap (inset) due to (b) increasing gallium concentration away from the sodium source, as revealed by the Ga/(In + Ga) SIMS signal ratio.
