Figure 1
From: Enhanced stability of filament-type resistive switching by interface engineering
(a) The bipolar RS cycles and structure schematic of the ITO/TaOx/NiOx/Al device, the inset shows the switching cycles and structure schematic of device without the NiOx layer; (b) Comparison of the switching cycles between the ITO/TaOx/NiOx/Al and the ITO/TaOx/Al devices in log(I)-V scale.
