Figure 2
From: Enhanced stability of filament-type resistive switching by interface engineering
(a) Endurance performance of the ITO/TaOx/NiOx/Al RRAM; (b) Retention performance of the ITO/TaOx/NiOx/Al RRAM.
Figure 2 | Scientific Reports
From: Enhanced stability of filament-type resistive switching by interface engineering
(a) Endurance performance of the ITO/TaOx/NiOx/Al RRAM; (b) Retention performance of the ITO/TaOx/NiOx/Al RRAM.
