Figure 3
From: Enhanced stability of filament-type resistive switching by interface engineering

Cumulative probability comparison of (a) SET & RESET voltages, and (b) LRS & HRS resistances between the ITO/TaOx/NiOx/Al and the ITO/TaOx/Al devices.
From: Enhanced stability of filament-type resistive switching by interface engineering
Cumulative probability comparison of (a) SET & RESET voltages, and (b) LRS & HRS resistances between the ITO/TaOx/NiOx/Al and the ITO/TaOx/Al devices.