Figure 3
From: One-step fabrication of porous GaN crystal membrane and its application in energy storage
(a–b) SEM images of GaNPM backside under high and low magnification, (c) energy dispersive X-ray spectroscopy (EDS) element mapping of GaNPM, (d) high-resolution transmission electron microscopy (HRTEM) image of GaNPM, (e) secondary electron (SE) image, (f) cathodoluminescence image of porous GaN samples (1200 °C for 30 min) and (j) cross-sectional TEM image of V shaped pit.
