Table 1 The list of SRIM calculated data and Hall results, and fitted parameters from TR-PL curves, of samples SC and S0–S3.

From: Distinct enhancement of sub-bandgap photoresponse through intermediate band in high dose implanted ZnTe:O alloys

Sample

SC

S0

S1

S2

S3

Type

p

p

High-insulating

High insulating

High insulating

Conc. (cm−3)

2.4 × 1015

3.8 × 1015

<1014

<1014

<1014

OTe density (cm−3)

~1020

~1020

~1020

V-I defect pair (cm−3)

~1022 based on SRIM simulation

I1, τ1

0.76, 24 ps

I2, τ2

1.01, 113 ps

0.30, 256 ps

0.99, 469 ps

0.97, 988 ps

1.05, 380 ps

β

0.65

0.49

0.57

0.58

0.56