Figure 1 | Scientific Reports

Figure 1

From: Transparent Memory For Harsh Electronics

Figure 1

(a) The ITO/AlN/ITO sandwich configuration of the two-terminal TRRAM device. (b) The transmittance spectrum of the ITO/AlN/ITO structure within the visible region (400 nm to 800 nm). The inset shows a photograph of the as-fabricated device marked with a red rectangle. The background depicts the National Taiwan University logo, which can be observed through the device without any refraction or distortion.

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