Figure 3

The (a) RH and RL and (b) VSET and VRESET distributions of the AlN TRRAM devices under ambient conditions of vacuum (Vac.), air, nitrogen (N2), and oxygen (O2).
The (a) RH and RL and (b) VSET and VRESET distributions of the AlN TRRAM devices under ambient conditions of vacuum (Vac.), air, nitrogen (N2), and oxygen (O2).