Figure 4
(a) I-V characteristics and the (b) resistance and (c) operation voltage distributions of the AlN TRRAM devices under proton irradiation fluences ranging from 1011 to 1015 cm−2.
Figure 4 | Scientific Reports
(a) I-V characteristics and the (b) resistance and (c) operation voltage distributions of the AlN TRRAM devices under proton irradiation fluences ranging from 1011 to 1015 cm−2.
