Figure 1: Major characteristics of diamond nucleation layers formed by BEN on Ir(001) surfaces. | Scientific Reports

Figure 1: Major characteristics of diamond nucleation layers formed by BEN on Ir(001) surfaces.

From: Ion bombardment induced buried lateral growth: the key mechanism for the synthesis of single crystal diamond wafers

Figure 1

(a) SEM image of the Ir surface after 10 min BEN in a pure DC discharge (100 mbar, 2% CH4/H2, UBias: about −280 V) taken with IL detector. (b) Identical spot imaged with SE detector. (c) Highly branched fractal like domains on Ir surface after BEN (30 mbar, 7% CH4/H2, UBias: about −280 V) imaged with IL detector (d) identical spot imaged with SE detector. (e) Cross section HRTEM image of a BEN layer sandwiched between the non-roughened Ir substrate and a ~10 nm thick Ir covering layer. (f) Cross section HRTEM image of a BEN layer on a roughened Ir substrate. (g) XPD pattern of the C1s electrons emitted from a BEN layer. (XPD pattern: Reprinted from Diamond Relat. Mater. 1712.

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