Figure 5: Freestanding unpolished diamond single crystal synthesized by heteroepitaxy on Ir/YSZ/Si(001). | Scientific Reports

Figure 5: Freestanding unpolished diamond single crystal synthesized by heteroepitaxy on Ir/YSZ/Si(001).

From: Ion bombardment induced buried lateral growth: the key mechanism for the synthesis of single crystal diamond wafers

Figure 5

The thickness of the disc is 1.6 ± 0.25 mm and its weight is 155 carat. Overall 43 X-ray diffraction (XRD) rocking curves for the Dia(004) reflection were measured along two perpendicular directions across the wafer (see supplementary information). The average full width at half maximum (FWHM) was 0.064 ± 0.011°, a value typical for IIa crystals41. For the corresponding azimuthal scans (Dia(311)) we obtained 0.12 ± 0.04°. In addition, μ-Raman measurements at 11 arbitrary spots across the wafer yielded an average FWHM of 1.75 ± 0.07 cm−1.

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