Figure 2: Morphological evolution of GaN grown on PSS with thickness of approximately 30, 300, 700, and 1000 nm, respectively. | Scientific Reports

Figure 2: Morphological evolution of GaN grown on PSS with thickness of approximately 30, 300, 700, and 1000 nm, respectively.

From: Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

Figure 2

(a–d) Top-view SEM images of GaN grown on PSS without NL. (e–h) Top-view SEM images of GaN grown on PSS with GaN NL. (i–l) Top-view SEM images of GaN grown on PSS with AlGaN NL. (m–p) Top-view SEM images of GaN grown on PSS with sputtered AlN NL.

Back to article page