Figure 3 | Scientific Reports

Figure 3

From: Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

Figure 3

Cross-sectional TEM images of GaN grown on PSS with (a) 25-nm-thick GaN NL, (d) 25-nm-thick AlGaN NL, and (g) 25-nm-thick sputtered AlN NL. 1st Row: The magnified TEM images of GaN NL on (b) flat c-plane sapphire and (c) inclined sidewall of PSS. 2nd Row: The magnified TEM images of AlGaN NL on (e) flat c-plane sapphire and (f) inclined sidewall of PSS. 3rd Row: The magnified TEM images of sputtered AlN NL on (h) flat c-plane sapphire and (i) inclined sidewall of PSS.

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