Figure 7: Simulated IQE curves along with the measured efficiency data for the LED on silicon and sapphire. | Scientific Reports

Figure 7: Simulated IQE curves along with the measured efficiency data for the LED on silicon and sapphire.

From: A comparative study of efficiency droop and internal electric field for InGaN blue lighting-emitting diodes on silicon and sapphire substrates

Figure 7

(a) The simulated IQE curve (red line) and the measured efficiency data (closed black circles) for the LED on silicon. (b) The simulated IQE curve (blue line) and the measured efficiency data (open circles) for the LED on sapphire. Best fit was obtained when the SRH carrier lifetime (τSRH) is 45 ns and the Auger recombination coefficient (C) is 8 × 1031cm6/s for the LED on silicon and τSRH is 105 ns and C is 7 × 1031 cm6/s for the LED on sapphire.

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