Figure 8: Comparison of carrier concentration distribution in MQWs for the LED on silicon and sapphire. | Scientific Reports

Figure 8: Comparison of carrier concentration distribution in MQWs for the LED on silicon and sapphire.

From: A comparative study of efficiency droop and internal electric field for InGaN blue lighting-emitting diodes on silicon and sapphire substrates

Figure 8

Simulated electron concentration (black lines) and hole concentration (red lines) distribution in MQWs for (a) the LED on silicon and (b) the LED on sapphire. The electron and hole distribution of the MQWs on sapphire is more inhomogeneous than that of the MQWs on silicon.

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