Figure 1
From: Quantitative strain analysis of InAs/GaAs quantum dot materials
Low resolution BF TEM images from the AlAs capped (a+c) and GaAs capped (b+d) samples. Isolated QDs are shown with medium magnification in Fig. (c and d). In Fig. (c) a V-shaped dislocation originates from a QD in the first layer, and each of the dislocation lines terminate at a QD in the second layer.
