Figure 2
From: Quantitative strain analysis of InAs/GaAs quantum dot materials
High resolution TEM images of embedded QDs in (a) the AlAs capped and (c) the GaAs capped samples. The corresponding Fourier transforms (FTs) are shown in (b and d). The graph in (e) shows the intensity in the FTs parallel to the [001] growth direction, covering the 004 and 006 peaks. This area is marked with dashed lines in each of the two FTs.
