Table 1 List of the reported responsivity and gain values of photocurrents in topological insulators and two-dimensional transition metal dichalcogenides.
From: Extremely high-performance visible light photodetector in the Sb2SeTe2 nanoflake
material | wavelength (nm) | Bias (V) | Responsivity (AW−1) | Gain (EQE) | reference |
---|---|---|---|---|---|
Sb2SeTe2 nanoflake | 532 | 1 | 2293 | 5344 | This work |
Sb2SeTe2 nanoflake | 532 | 0.1 | 276 | 643 | This work |
Sb2Te3 film | 980 | 0.01 | 0.26 | 0.33 | ref. 26 |
Sb2Te3 film | 980 | 0.1 | 2.31 | 2.93 | ref. 26 |
Sb2Te3 film | 980 | 1 | 21.7 | 27.4 | ref. 26 |
Bi2Se3 nanowire | 1064 | 0.1 | 207 | 241 | ref. 21 |
Bi2Se3 nanowire | 1064 | 0.15 | 300 | 350 | ref. 21 |
Bi2Te3 polycrystal | 1064 | 0.3 | 3 × 10−5 | 3.85 × 10−5 | ref. 22 |
graphene – Bi2Te3 | 1550 | 1 | 0.22 | 0.17 | ref. 34 |
graphene – Bi2Te3 | 980 | 1 | 10 | 11 | ref. 34 |
graphene – Bi2Te3 | 532 | 1 | 36.7 | 85.8 | ref. 34 |
Bi2Se3 nanosheet (exfoliated) | 532 | 0.6 | 20.4 × 10−3 | ref. 35 | |
Pristine Bi2Se3 bulk | 532 | 0.6 | 2.45 × 10−3 | ref. 35 | |
Heat-treated Bi2Se3 nanosheets | 532 | 0.6 | 16.1 × 10−3 | ref. 35 | |
Graphene | 532 | 0.1 | 8.61 | ref. 7 | |
Graphene | 1550 | 0.4 | 6 × 10−3 | ref. 8 | |
GaSe | 254 | 5 | 2.8 | 13.67 | ref. 9 |
GaS | 254 | 2 | 4.2 | 20.5 | ref. 10 |
MoS2 | 670 | 1 | 4.2 × 10−4 | ref. 11 | |
MoS2 | 532 | 5 | ~6 | ref. 12 | |
MoS2 | 532 | 10 | 0.57 | 13.3 | ref. 13 |
MoS2 | 532 | 1 | 780 | 1840 | ref. 14 |
MoS2 | 633 | 1 | 120 | ref. 15 | |
MoS2 nanoflake | 532 | 1 | 30 | 103 | ref. 29 |
MoS2 nanoflake | 561 | 8 | 880 | ref. 30 | |
MoS2 | 655 | 5 | 4.1 | ref. 36 | |
APTES-doped MoS2 | 655 | 5 | 56.5 | ref. 36 | |
OTS-doped MoS2 | 655 | 5 | 0.36 | ref. 36 | |
WS2 | 655 | 5 | 20 | ref.36 | |
APTES-doped WS2 | 655 | 5 | 0.59 | ref. 36 | |
OTS-doped WS2 | 655 | 5 | 36.4 | ref. 36 | |
WS2 film | 635 | 9 | 0.7 | 137% | ref.37 |
WSe2 film | 635 | 10 | 0.92 | 180% | ref.38 |
WSe2 monolayer | 650 | 2 | 1.8 × 105 | 3.5 × 105 | ref. 39 |
Mo0.5W0.5S2 polycrystal film | 635 | 2.2 | 5.8 | 11.35% | ref. 40 |
MoTe2 | 473 | 0.5 | 2560 | 6700 | ref. 41 |
HfSe2 multilayer | 800 | 2 | 3961 | ref. 42 | |
In2Se3 nanosheet | 300 | 5 | 395 | 1630 | ref. 43 |
In2Se3 nanosheet | 400 | 5 | 110 | 340 | ref. 43 |
In2Se3 nanosheet | 500 | 5 | 59 | 146 | ref. 43 |
InSe layers | 532 | 5 | 0.101 | 0.235 | ref. 44 |
NbSe2 nanoflake | 532 | 0.1 | 2.3 | 300 | ref. 45 |
NbSe2 nanoflake | 808 | 0.1 | 3.8 | 300 | ref. 45 |